The Specifications for Sputtering Targets and Cathodes Materials
Low Impurity Content, High Purity
Purity is one of the most important performance index of sputtering targets and cathodes materials, it has profound impact on the homogeneity of thin film. Now, the requirement for purity of sputtering targets and cathodes materials is more and more higher. For example, with the rapid development of microelectronics industry, silicon wafer size develops from 6”, 8” to 12”, and the wiring width from 0.5 um reduce to 0.25 um, 0.18 um and 0.13 um, the purity 99.995% of the sputtering target materials can satisfy the technological requirements of 0.35 um, but now 0.18 um and 0.13um lines require for the purity of 99.999% or higher sputtering targets and cathodes materials.
The advantages of high density sputtering targets and cathodes materials are:
- excellent electrical conductivity
- outstanding thermal conductivity
- high strength
In coating process with high density sputtering targets and cathodes materials,
sputtering power is lower, the deposition rate is faster, the quality of thin film is better and not easy crack. The service life of sputtering targets and cathodes materials will be longer, we can get thin film with lower electrical resistivity and higher light transmittance.
Microstructure of Titanium Sputtering Targets, Grade 2
Fine Grain Size and Homogeneous of Microstructure
The finer of grain size, the thickness of thin film will distribute more homogeneous，the sputter rate will faster. And the homogeneous of sputtering targets and cathodes materials is the important guarantee for the steady of thin film quality.
Okai metal develops a wide range of low impurity content, high purity, high density, fine grain size and homogeneous microstructure sputtering targets and cathodes, with materials of Titanium, Zirconium, Chromium, Niobium, Tantalum, Molybdenum,Hafnium, Aluminum, Silicon, AlTi, AlCr, NiCr and SiAl etc., to improve your coating process and obtain denser, more durable, and better function layers.