The principle of magnetron sputtering target

　　Magnetron sputtering principle: in sputtering target (cathode) with an orthogonal magnetic field and electric field and anode, sputtering target in high vacuum chamber filled with inert gases needed (usually Ar), the permanent magnet forms 250 to 350 Gauss magnetic field on the target surface, with high pressure electric field. Orthogonal electromagnetic field.

　　Under the influence of electric field, Ar gas ionization into ions and electrons, the target with a high negative voltage, and the working gas under the action of magnetic field from the electronic target from the ionization probability increases, the formation of a high density plasma near the cathode, the role of Ar ions in the Lorentz force under the accelerated toward the target surface. At very high speed bombarding target surface, the target was sputtered atoms follow the momentum conversion principle with high kinetic energy from the target surface to substrate deposited film. Magnetron sputtering is generally divided into two kinds: DC sputtering and RF sputtering, in which the principle of direct current sputtering equipment is simple, and the rate of sputtering is also fast.

　　RF sputtering has a wide range of applications. In addition to sputtering conductive materials, it can also sputter non conductive materials. At the same time, reactive sputtering is used to prepare oxides, nitrides and carbides. When the frequency of sputtering target increases, it becomes microwave plasma sputtering, and now the electron cyclotron resonance (ECR) microwave plasma sputtering is often used.